Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on Germanium
- 1 December 1966
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (13) , 4687-4693
- https://doi.org/10.1063/1.1708118
Abstract
Gallium arsenide has been grown on germanium using arsenic trichloride and gallium. With optimum growth conditions the epitaxial layers have properties close to those of good-quality bulk crystals. Comparison between epitaxial and bulk crystals is made in terms of the widths of the x-ray rocking curves and of the properties of p-n junctions formed within the epitaxial layer.This publication has 20 references indexed in Scilit:
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