High-through-put, high-yield, and highly-reproducible (AlGa)As double-heterostructure laser wafers grown by molecular beam epitaxy
- 15 April 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (8) , 587-589
- https://doi.org/10.1063/1.92464
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of accelerated growth rate (1–5 μm/h) on molecular beam epitaxial GaAs using Si as a dopantApplied Physics Letters, 1980
- Infrared-visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double-heterostructure lasers grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Very low current threshold GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1980
- Low-current-threshold and high-lasing uniformity GaAs–AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1979