Infrared-visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double-heterostructure lasers grown by molecular beam epitaxy
- 1 February 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (2) , 917-919
- https://doi.org/10.1063/1.327668
Abstract
Room‐temperature low‐current‐threshold broad‐area Fabry‐Perot AlxGa1−xAs/AlyGa1−y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam epitaxy (MBE) covering the lasing emission wavelength from 8900 to 7200 Å (infrared to visible). In this emission range, the averaged pulsed current threshold densities Jth are as low as those obtained by liquid‐phase epitaxy (LPE). At ∼8200 Å, the wavelength at which DH lasers have also been prepared by metalorganic chemical‐vapor deposition (MO‐CVD), the Jth ’s of the MBE grown lasers are lower.This publication has 10 references indexed in Scilit:
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