Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies
- 15 March 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (6) , 390-392
- https://doi.org/10.1063/1.90065
Abstract
Conversion efficiencies as high as 20% of AM1 have been obtained for single‐crystal GaAs shallow‐homojunction solar cells without Ga1−xAlxAs layers. These cells, which are fabricated by a simplified technique that does not require any vacuum processing steps, utilize an n+/p/p+ structure with an antireflection coating prepared by anodic oxidation of the n+ layer.Keywords
This publication has 5 references indexed in Scilit:
- High-efficiency GaAs shallow-homojunction solar cellsApplied Physics Letters, 1977
- Influence of Temperature on Anodically Grown Native Oxides on Gallium ArsenideJournal of the Electrochemical Society, 1977
- An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAs-GaAs solar cellsApplied Physics Letters, 1977
- Refractive index of a native oxide anodically grown on GaAsApplied Physics Letters, 1977
- Anodic Oxidation of GaAs in Mixed Solutions of Glycol and WaterJournal of the Electrochemical Society, 1976