High-efficiency GaAs shallow-homojunction solar cells
- 1 November 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (9) , 629-631
- https://doi.org/10.1063/1.89777
Abstract
Conversion efficiencies as high 15.3% (17% when corrected for contact area) have been obtained for single-crystal antireflection-coated GaAs solar cells fabricated without the use of Ga1−xAlxAs layers. These devices employ a thin n+/p/p+ structure prepared by chemical vapor deposition, in which surface recombination losses are reduced because the n+ layer is so thin (1300 Å) that most of the carriers are generated in the p layer below the junction.Keywords
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