Dynamics of film growth of GaAs by MBE from Rheed observations
- 1 May 1983
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 31 (1) , 1-8
- https://doi.org/10.1007/bf00617180
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculationsPhysical Review B, 1982
- Auger line shape analyses for epitaxial growth in the Cu/Cu, Ag/Ag and Ag/Cu systemsApplications of Surface Science, 1982
- Interface electronic structure of Pb on GaAs(001)Journal of Vacuum Science and Technology, 1982
- Epitaxy of Si(111) as studied with a new high resolving LEED systemSurface Science, 1982
- Development of steps on GaAs during molecular beam epitaxyJournal of Vacuum Science and Technology, 1982
- Thermal desorption spectroscopy of condensed lead films on {100} GaAs surfacesApplied Physics A, 1981
- Thickness periodicity in the Auger line shapes from epitaxial (111) Pd/ (111) Cu filmsJournal of Vacuum Science and Technology, 1981
- Angle-resolved photoemission from As-stable GaAs (001) surfaces prepared by MBEJournal of Physics C: Solid State Physics, 1981
- Dynamics of Crystal GrowthAdvances in Chemical Physics, 1979
- Multinuclear Growth of Dislocation-Free Planes in ElectrocrystallizationJournal of the Electrochemical Society, 1972