Epitaxy of Si(111) as studied with a new high resolving LEED system
- 2 May 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 117 (1-3) , 180-187
- https://doi.org/10.1016/0039-6028(82)90498-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The resolving power of a low-energy electron diffractometer and the analysis of surface defectsSurface Science, 1980
- LEED-investigations and work-function measurements of the first stages of epitaxy of tungsten on tungsten (110)Journal of Applied Physics, 1980
- Quantitative evaluation of random distributed steps at interfaces and surfacesSurface Science, 1978
- Low-energy electron diffraction from imperfect structuresSurface Science, 1970