Deposition and characterization of SiC and cordierite thin films grown by pulsed laser evaporation
- 1 November 1990
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 25 (11) , 4929-4932
- https://doi.org/10.1007/bf01129963
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Thermal Oxidation of Sputtered Silicon Carbide Thin FilmsJournal of the Electrochemical Society, 1984
- High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor depositionApplied Physics Letters, 1984
- ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on SiApplied Physics Letters, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor DepositionJapanese Journal of Applied Physics, 1980
- Effects of Target Materials on the Structural Properties of Sputtered SiC FilmsJournal of the Electrochemical Society, 1980
- Silicon carbide bipolar transistorSolid-State Electronics, 1978
- LOW-TEMPERATURE EPITAXY OF β-SiC BY REACTIVE DEPOSITIONApplied Physics Letters, 1970
- Vacuum Deposited Thin Films Using a Ruby LaserApplied Optics, 1965