High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition
- 1 July 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1) , 72-73
- https://doi.org/10.1063/1.94973
Abstract
Electrical properties of 3C‐SiC layers, epitaxially grown on silicon by chemical vapor deposition, have been investigated at the temperatures between room temperature and 850 °C. In this temperature range, the electron mobility changes with temperature as μH∼T−1.2∼−1.4. The weaker temperature dependence of mobility and the larger mobilities compared with other polytypes of SiC suggest that 3C‐SiC is a promising material for devices operated at high temperatures.Keywords
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