Electron Mobilities in SiC Polytypes
- 1 January 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (1) , 50-52
- https://doi.org/10.1063/1.1709007
Abstract
Electron‐scattering mechanisms in SiC polytypes are discussed. It is shown that the mechanism which limits mobility from 300° to 800°K in n‐type SiC is probably intervalley scattering (in relatively pure samples). The dependence of electron mass on polytype enables one to study the scattering mechanisms by a comparison of Hall mobilities in two polytypes.This publication has 13 references indexed in Scilit:
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