Enhanced Nucleation and Enrichment of Strained-Alloy Quantum Dots
- 12 October 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (15) , 3183-3186
- https://doi.org/10.1103/physrevlett.81.3183
Abstract
An epitaxial strained layer is metastable against nucleation of three-dimensional “islands.” For an alloy, I show that these islands nucleate at a substantially different composition than the alloy layer. This stress-induced segregation drastically increases the nucleation rate. For planar-layer electronic devices, these effects exacerbate the roughening problem. However, the same effects enhance the promise of “self-assembled quantum dots.” Possible “self-capping” of quantum dots is also discussed.Keywords
This publication has 13 references indexed in Scilit:
- Equilibrium Shapes and Properties of Epitaxially Strained IslandsPhysical Review Letters, 1997
- A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional ModesJapanese Journal of Applied Physics, 1997
- Mechanics of coherent and dislocated island morphologies in strained epitaxial material systemsJournal of Applied Physics, 1997
- Structural Transition in Large-Lattice-Mismatch HeteroepitaxyPhysical Review Letters, 1996
- New Instability in Molecular Beam EpitaxyPhysical Review Letters, 1995
- Competing relaxation mechanisms in strained layersPhysical Review Letters, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Molecular-beam epitaxial growth mechanisms of (Al,Ga)As on vicinal GaAs surfaces: Self-organization and step bunchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Elastic Energies of Coherent Germanium Islands on SiliconMRS Proceedings, 1990