Competing relaxation mechanisms in strained layers
- 30 May 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (22) , 3570-3573
- https://doi.org/10.1103/physrevlett.72.3570
Abstract
We show that strained epitaxial layers can relax by two competing mechanisms. At large misfit, the surface becomes rough, allowing easy nucleation of dislocations. However, strain-induced surface roughening is thermally activated, and the energy barrier increases very rapidly with decreasing misfit ɛ. Thus below some misfit , the strain relaxes by nucleation of dislocations at existing sources before the surface has time to roughen. Relaxation via surface roughening is technologically undesirable; we discuss how temperature, surfactants, or compositional grading change and so control the mode of relaxation.
Keywords
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