Generation of misfit dislocations in semiconductors
- 1 December 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (11) , 4413-4420
- https://doi.org/10.1063/1.339078
Abstract
The acting slip mechanism for the generation of misfit dislocations in diamond-type–semiconductor heterostructures is investigated with transmission electron microscopy. It is shown that dissociation of the 60°-mixed dislocations can lead to a difference in strain accommodation for tensile and compressive strain. A strain/thickness relation is obtained from the energy expression for nucleation of half-loops. This relation is compared with other theoretical relations and with experimental strain data for Si/GaP(001) and In0.07Ga0.93As/GaAs(001) , measured with transmission electron microscopy and ion blocking.This publication has 25 references indexed in Scilit:
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