Dislocations in Silicon due to Localized Diffusion
- 1 November 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (12) , 4394-4396
- https://doi.org/10.1063/1.1708049
Abstract
Dislocations generated by localized diffusions in silicon are investigated through x‐ray diffraction microscopy. It is shown that dislocations are produced at the interface of diffused and undiffused silicon as a consequence of elastic strains resulting most likely from steep lattice‐constant gradients. From the device point of view these dislocations are undesirable because their axes lie outside the diffusion plane; consequently they can cause device failure.This publication has 12 references indexed in Scilit:
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