X-Ray Observations of Diffusion-Induced Dislocations in Silicon
- 1 April 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (4) , 1540-1542
- https://doi.org/10.1063/1.1728769
Abstract
Diffusion‐induced dislocations in silicon have been studied by x‐ray diffraction microscopy. Lines lying in a (001) diffusion plane forming rectangular arrays have been identified as edge dislocations in [11̄0] and [110] directions with Burgers vectors ½ [110] and ½ [11̄0] and (001) glide plane.This publication has 7 references indexed in Scilit:
- X-Ray Diffraction Microscopy Study of Imperfections in Silicon Single CrystalsJournal of the Electrochemical Society, 1962
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961
- Studies of Individual Dislocations in Crystals by X-Ray Diffraction MicroradiographyJournal of Applied Physics, 1959
- Evaluation of the Surface Concentration of Diffused Layers in SiliconBell System Technical Journal, 1958
- Direct Observation of Individual Dislocations by X-Ray DiffractionJournal of Applied Physics, 1958
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958