Slip Patterns on Boron-Doped Silicon Surfaces
- 1 September 1961
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (9) , 1776-1780
- https://doi.org/10.1063/1.1728435
Abstract
Diffusion of a high concentration of boron impurities into a shallow surface layer of silicon and subsequent etching reveals regular arrays of etched lines with crystalline symmetries. These patterns are interpreted as slip lines introduced by the stress from the nonuniformly distributed, undersized substitutional boron impurities in the silicon lattice.This publication has 15 references indexed in Scilit:
- Dislocations and impurity boundaries in zing crystals grown from the meltActa Metallurgica, 1961
- Diffusion and oxide masking in silicon by the box methodSolid-State Electronics, 1960
- ForewordSolid-State Electronics, 1960
- On the orientation effect in the polygonization of bent silicon crystalsActa Metallurgica, 1958
- Effect of Dislocations on Breakdown in Silicon p-n JunctionsJournal of Applied Physics, 1958
- Evaluation of the Surface Concentration of Diffused Layers in SiliconBell System Technical Journal, 1958
- Arrangements of Dislocations in Plastically Bent Silicon CrystalsJournal of Applied Physics, 1958
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956
- Dislocations at compositional fluctuations in germanium-silicon alloysActa Metallurgica, 1956
- Densitometric and Electrical Investigation of Boron in SiliconPhysical Review B, 1955