Effect of Dislocations on Breakdown in Silicon p-n Junctions

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Abstract
The light emission patterns of silicon diffused p‐n junctions at breakdown have been compared with the etch‐pit patterns that reveal dislocations. It is concluded that avalanche breakdown microplasmas occur preferentially where dislocations pass through the junction. In narrow p‐n junctions, large numbers of dislocations result in enhanced internal field emission and, consequently, a soft reverse characteristic. A qualitative correlation is found between the nature of the light emission pattern (spots for avalanche breakdown, glow for field emission) and the quality of the reverse characteristic. Possible reasons why breakdown should occur preferentially at dislocations are discussed though no precise conclusion is reached. Peculiar singularities observed in the light emission patterns of some junctions were found to coincide with crystal abnormalities revealed in the etch patterns.