Diffusion-Induced Dislocations in Silicon
- 1 June 1964
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (6) , 1909-1914
- https://doi.org/10.1063/1.1713768
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- Diffraction contrast of electron microscope images of crystal lattice defects. III. Results and experimental confirmation of the dynamical theory of dislocation image contrastProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- X-Ray Observations of Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1962
- Double tilting specimen holder for the Siemens Elmiskop IJournal of Scientific Instruments, 1962
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961
- Impurity Redistribution and Junction Formation in Silicon by Thermal OxidationBell System Technical Journal, 1960
- A kinematical theory of diffraction contrast of electron transmission microscope images of dislocations and other defectsPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1960