Structure and Origin of Stacking Faults in Epitaxial Silicon
- 1 February 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (2) , 406-415
- https://doi.org/10.1063/1.1702622
Abstract
Light optical and transmission electron microscopy on epitaxially deposited silicon crystals in [100], [110], and [111] orientation show that growth stacking faults are formed regardless of orientation. These faults occur in bundles of usually tetrahedral figures with the apices at the substrate‐film interface, and some faults may exist as closed intrinsic‐extrinsic pairs. The results suggest that faults are nucleated by oxygen contamination. Some evidence for impurity segregation to faults is also presented.This publication has 11 references indexed in Scilit:
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