X-Ray Observations of Partial Dislocations in Epitaxial Silicon Films
- 1 April 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (4) , 1538-1540
- https://doi.org/10.1063/1.1728768
Abstract
Crystal perfection of epitaxial silicon films has been studied by x‐ray diffraction microscopy. X‐ray observations indicate the presence of defects in {111} planes with 〈112〉 Burgers vectors. The x‐ray image associated with these defects is interpreted as due to stacking faults bounded by partial dislocations. Large stacking faults, the faulted area between the partials as wide as 10 μ, have been found to be the principal imperfections in epitaxially grown silicon films.This publication has 4 references indexed in Scilit:
- Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1962
- X-Ray Diffraction Microscopy Study of Imperfections in Silicon Single CrystalsJournal of the Electrochemical Society, 1962
- Studies of Individual Dislocations in Crystals by X-Ray Diffraction MicroradiographyJournal of Applied Physics, 1959
- Direct Observation of Individual Dislocations by X-Ray DiffractionJournal of Applied Physics, 1958