X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON
- 15 September 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 7 (6) , 176-178
- https://doi.org/10.1063/1.1754365
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Applications of `limited projection topographs' and `direct beam topographs' in diffraction topographyBritish Journal of Applied Physics, 1963
- X-Ray Observations of Diffusion-Induced Dislocations in SiliconJournal of Applied Physics, 1962
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961
- Studies of Individual Dislocations in Crystals by X-Ray Diffraction MicroradiographyJournal of Applied Physics, 1959
- On the Kinetics of Quenched-in Lattice Vacancies in PlatinumJournal of Applied Physics, 1959
- Die Absorption von R ntgenstrahlen im Fall der InterferenzThe European Physical Journal A, 1950