On the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in Silicon
- 1 July 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 100 (1) , 77-85
- https://doi.org/10.1002/pssb.2221000106
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Energy Spectra Of Dislocations In Silicon And GermaniumJournal of Microscopy, 1980
- Electron states associated with partial dislocations in siliconPhysica Status Solidi (b), 1979
- (110) surface atomic structures of covalent and ionic semiconductorsPhysical Review B, 1979
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978
- Dislocation Model of Amorphous GermaniumJournal of the Physics Society Japan, 1978
- Lattice distortion near vacancies in diamond and silicon. IJournal of Physics C: Solid State Physics, 1971
- Crystal Vibrations of Silicon by the Use of Valence Force PotentialsPhysica Status Solidi (b), 1970
- On Elastic Properties of Covalent CrystalsPhysica Status Solidi (b), 1970
- Theory of the Third-Order Elastic Constants of Diamond-Like CrystalsPhysical Review B, 1966
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966