Energy Spectra Of Dislocations In Silicon And Germanium
- 1 January 1980
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 118 (1) , 23-34
- https://doi.org/10.1111/j.1365-2818.1980.tb00242.x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Electron states associated with partial dislocations in siliconPhysica Status Solidi (b), 1979
- Investigation of the energy spectrum and kinetic phenomena in dislocated Si crystals (I)Physica Status Solidi (a), 1977
- Optical excitation of dislocation states in germanium. II. Analysis of the experimental resultsPhysica Status Solidi (a), 1977
- Optical excitation of dislocation states in germanium. I. ExperimentsPhysica Status Solidi (a), 1977
- Capacitance measurements as a new tool to investigate the electronic states of dislocations in semiconductorsPhysica Status Solidi (a), 1976
- Edge dislocation behaviour in Au–n-silicon diodesPhysica Status Solidi (a), 1975
- The magnetic field dependence of the hall coefficient in GermaniumPhysica Status Solidi (a), 1974
- Trägerbeweglichkeit in verformtem GermaniumPhysica Status Solidi (b), 1969
- Die elektrischen Eigenschaften von Versetzungen in GermaniumPhysica Status Solidi (b), 1967
- Some Predicted Effects of Temperature Gradients on Diffusion in CrystalsPhysical Review B, 1953