X-ray reflectivity of an Sb delta-doping layer in silicon
- 15 November 1990
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (10) , 5105-5108
- https://doi.org/10.1063/1.347047
Abstract
X-ray reflectivity measurements were made on Si(001) crystals containing a delta-doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.This publication has 11 references indexed in Scilit:
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