NiSi mixing: A new model for low temperature silicide formation
- 1 July 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 157 (1) , 1-16
- https://doi.org/10.1016/0039-6028(85)90631-4
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Atom-probe study of silicide formation at Ni/Si interfacesJournal of Vacuum Science & Technology B, 1984
- Electronic structure of NiPhysical Review B, 1982
- Ni on Si: Interfacial compound formation and electronic structurePhysical Review B, 1982
- Metal/silicon interface formation: The Ni/Si and Pd/Si systemsJournal of Vacuum Science and Technology, 1981
- Atomic Displacements in the Si(111)-(7×7) SurfacePhysical Review Letters, 1980
- Stopping power values of Be, C, Al and Si for 4He ionsNuclear Instruments and Methods, 1980
- A Model on the Mechanism of Room Temperature Interfacial Intermixing Reaction in Various Metal‐Semiconductor Couples: What Triggers the Reaction?Journal of the Electrochemical Society, 1980
- Stopping power values of Ti, Ni, Ag and Au for 4He ionsNuclear Instruments and Methods, 1980
- XPS study of the chemical structure of the nickel/silicon interfaceJournal of Vacuum Science and Technology, 1980
- Structural studies of thin nickel films on silicon surfacesJournal of Vacuum Science and Technology, 1978