Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. III. Absorption Intensity
- 1 February 1969
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 26 (2) , 377-380
- https://doi.org/10.1143/jpsj.26.377
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Paramagnetism of Phosphorus Doped Silicon in the Non-Metallic Impurity ConductionJournal of the Physics Society Japan, 1967
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. IIJournal of the Physics Society Japan, 1966
- Effect of Doping on the Electron Spin Resonanceain Phosphorus Doped Silicon Studied at Liquid Nitrogen TemperatureJournal of the Physics Society Japan, 1964
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped SiliconJournal of the Physics Society Japan, 1964
- Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some SemiconductorsPhysical Review B, 1954
- Electron Spin Resonance in a Silicon SemiconductorPhysical Review B, 1953
- The computation of Fermi-Dirac functionsPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1938
- The temperature dependence of free electron susceptibilityProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1935