Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures

This publication has 8 references indexed in Scilit:

• High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor
  Applied Physics Letters, 1991
• MOVPE growth of AlGaAs using trimethylamine alane
  Journal of Crystal Growth, 1990
• Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane
  Applied Physics Letters, 1990
• Improved assessment of structural properties of ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/GaAs heterostructures and superlattices by double-crystal x-ray diffraction
  Physical Review B, 1986
• Compensation in heavily doped n-type InP and GaAs
  Journal of Applied Physics, 1985
• Hydrogen elimination from secondary amine and phosphine adducts of gallium hydride
  J. Chem. Soc. A, 1966
• Trimethylamine Adducts of Gallane and Trideuteriogallane
  Inorganic Chemistry, 1963
• 698. Aluminium hydride adducts of trimethylamine: vibrational spectra and structure
  Journal of the Chemical Society, 1963