High-Field Magnetoresistance of Semiconducting Diamond

Magnetoresistance was measured in $p$-type semiconducting diamond for magnetic fields up to 170 kG. Longitudinal effects were measured in the [$\overline{1}11$] and [$1\overline{1}3$] directions, and transverse effects were measured for current $I$ in the [$1\overline{1}3$] direction and magnetic field $H$ in the [110] direction, for $I$ in the [$1\overline{1}3$] direction and $H$ in the [$\overline{1}11$] direction, and for $I$ in the [$\overline{1}11$] direction and $H$ in the [110] direction. Using a theory which assumes an isotropic isothermal solid in which conduction is by holes from three uncoupled valence bands associated with spherical energy surfaces and in which mixed scattering by lattice vibrations and ionized impurities is applicable, lattice mobilities of 3900, 195, and 1365 ${\mathrm{cm}}^2$/V sec at 307.7°K were calculated for the three bands. Lattice scattering was found to be more important than ionized-impurity scattering.