Metastable thermal donor states in silicon
- 25 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (21) , 1500-1502
- https://doi.org/10.1063/1.97812
Abstract
Deep level transient spectroscopy has been applied to the study of defects introduced in silicon by short heat treatments at 450 °C. The behavior of an electron trap at Ec−0.15 eV is shown to provide strong evidence for the bistable nature of small thermal donor clusters.Keywords
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