Spectroscopic studies of 450° C thermal donors in silicon
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 110-112
- https://doi.org/10.1016/0378-4363(83)90455-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Electrical and infrared spectroscopic investigations of oxygen-related donors in siliconPhysica Status Solidi (a), 1979
- EPR spectra of heat-treatment centers in oxygen-rich siliconSolid State Communications, 1978
- The effects of heat treatment on dislocation-free oxygen-containing silicon crystalsJournal of Applied Physics, 1977
- Excitation spectrum of bismuth donors in siliconPhysical Review B, 1975
- Excitation Spectra and Piezospectroscopic Effects of Magnesium Donors in SiliconPhysical Review B, 1972
- The effect of carbon on thermal donor formation in heat treated pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1972
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Reactions of group iii acceptors with oxygen in silicon crystalsJournal of Physics and Chemistry of Solids, 1960
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958