Electrical and infrared spectroscopic investigations of oxygen-related donors in silicon
- 16 December 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 56 (2) , 557-564
- https://doi.org/10.1002/pssa.2210560220
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- On the electrical activity of oxygen in siliconPhysica Status Solidi (a), 1979
- Colour centres in vitreous silicaPhilosophical Magazine Part B, 1978
- EPR spectra of heat-treatment centers in oxygen-rich siliconSolid State Communications, 1978
- The carrier lifetime of heat-treated silicon crystalsJournal of Electronic Materials, 1975
- The effect of carbon on thermal donor formation in heat treated pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1972
- The ionization behavior of donors formed from oxygen in germaniumJournal of Physics and Chemistry of Solids, 1961
- Kinetics of donor reactions in oxygen-doped germaniumJournal of Physics and Chemistry of Solids, 1961
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Infrared Spectra of Heat Treatment Centers in SiliconPhysical Review Letters, 1958
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957