The carrier lifetime of heat-treated silicon crystals
- 1 April 1975
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 4 (2) , 281-298
- https://doi.org/10.1007/bf02655406
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- TEM observation of dislocation loops correlated with individual swirl defects in as-grown siliconApplied Physics Letters, 1974
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Auger-rekombination in SiSolid State Communications, 1973
- The effect of carbon on thermal donor formation in heat treated pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1972
- Kinetics and Equilibria Involving Copper and Oxygen in GermaniumJournal of Applied Physics, 1962
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Infrared Spectra of Heat Treatment Centers in SiliconPhysical Review Letters, 1958
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957
- Quenched-In Recombination Centers in SiliconPhysical Review B, 1956