MDmesh/sup TM/: innovative technology for high voltage Power MOSFETs
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10636854,p. 65-68
- https://doi.org/10.1109/ispsd.2000.856774
Abstract
A new PowerMOSFET device, called MDmesh/sup TM/ (Multiple Drain mesh), that joins the best performance in the Power management market either in static and dynamic behavior is presented. A strong reduction in the silicon conduction losses per area allowed a valuable resize of the device area and a reduction of the used package volume. Moreover, a valuable reduction in device internal capacitance and gate charge has been observed and an optimized switching behavior has been obtained. A deep look inside the device performances will be presented and the main device features will be compared with the ones of a device having the same conduction losses fabricated with a standard technology.Keywords
This publication has 2 references indexed in Scilit:
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- Coolmos Technology – Outstanding Prospects towards Idealized Power Semiconductor SwitchEPE Journal, 2000