Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
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- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A new generation of high voltage MOSFETs breaks the limit line of siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Simulated superior performances of semiconductor superjunction devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Optimum doping profile for minimum ohmic resistance and high-breakdown voltageIEEE Transactions on Electron Devices, 1979