Optimum doping profile for minimum ohmic resistance and high-breakdown voltage
- 1 March 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (3) , 243-244
- https://doi.org/10.1109/t-ed.1979.19416
Abstract
The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10-9V\min{B}\max{2.6}Ω.cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+structure.Keywords
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