High-voltage planar p-n junctions
- 1 January 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (8) , 1409-1414
- https://doi.org/10.1109/proc.1967.5842
Abstract
A concentric ring junction has been devised to prevent surface breakdown of a planar junction. By properly choosing the spacing between the main junction and the ring, the ring junction acts like a voltage divider at the surface. In addition, the ring junction minimizes the effect of the junction curvature at the periphery of a planar junction. Devices fabricated with three such rings showed breakdown voltages of 2000 and 3200 volts on n-type silicon with impurity concentrations 6.5 × 1013and 2.5 × 1013cm-3, respectively. That the structure operated as proposed was corroborated by comparison of the reverse leakage current with a one parameter fit to a theoretically calculated current obtained from the approximated volume of the space charge regions. These results together with the photo response measurements indicate that the field-limiting ring junction can be used successfully to obtain high-voltage planar p-n junctions.Keywords
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