Fabrication and Integration of Nanostructures on Si Surfaces
- 4 February 1999
- journal article
- Published by American Chemical Society (ACS) in Accounts of Chemical Research
- Vol. 32 (5) , 447-454
- https://doi.org/10.1021/ar970235o
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Fabrication of buried epitaxial CoSi2 layer through selective diffusionApplied Physics Letters, 1997
- Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer filmsPhysical Review B, 1996
- Trace of interface reconstruction in Ge solid-phase epitaxy on Si(111)Physical Review B, 1994
- Local hydride formation of the Si(111)-(7×7) surface by hydrogen atoms deposited from a scanning tunneling microscope tipPhysical Review Letters, 1994
- Transient step bunching on a vicinal Si(111) surfacePhysical Review Letters, 1994
- Scanning tunneling microscope tip–sample interactions: Atomic modification of Si and nanometer Si Schottky diodesJournal of Vacuum Science & Technology A, 1993
- High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surfacePhysical Review B, 1993
- Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid TreatmentsJapanese Journal of Applied Physics, 1991
- Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HFApplied Physics Letters, 1991
- Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interfacePhysical Review Letters, 1986