Fabrication of buried epitaxial CoSi2 layer through selective diffusion

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Abstract
The incorporation of metallic layers into the bulk of semiconductors is gaining tremendous attention for device applications. This is mainly achieved by ion beam synthesis. In the ultrathin film regime, however, this technique is not practical due to the damage incurred. Here we report a technique by which fabrication of buried epitaxial CoSi2 is achieved by making use of the selective diffusion behavior of Co. Co atoms diffuse through a Ge overlayer on a Si(111) substrate and are terminated by reaction with the Si atoms underneath. Ion scattering as well as high resolution microscopy results confirm that the CoSi2 layer thus formed is in epitaxial form. This method would help in providing functionality to nanostructure based devices.