Epitaxial growth of transition-metal silicides on silicon
- 1 March 1991
- journal article
- review article
- Published by Elsevier in Materials Science Reports
- Vol. 6 (2-3) , 53-140
- https://doi.org/10.1016/0920-2307(91)90004-7
Abstract
No abstract availableKeywords
This publication has 178 references indexed in Scilit:
- Epitaxial growth of CrSi and CrSi2 on Si(1 1 1)Solid State Communications, 1988
- Experimental study of partial densities of states in MoSi2Solid State Communications, 1987
- Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)Surface Science, 1987
- Localized epitaxial growth of CrSi2 on siliconJournal of Applied Physics, 1986
- Ion beam crystallography of surfaces and interfacesSurface Science Reports, 1985
- Transistor effect in monolithic Si/CoSi 2 /Si epitaxial structuresElectronics Letters, 1984
- Growth of single crystal epitaxial silicides on silicon by the use of template layersApplied Physics Letters, 1983
- Low energy electron loss spectroscopic study of Pd-Si(111) systemSolid State Communications, 1982
- Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodesSolid-State Electronics, 1972
- On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal SubstratesPhysica Status Solidi (b), 1967