Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes
- 31 December 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (12) , 1331-1337
- https://doi.org/10.1016/0038-1101(72)90126-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Doping dependence of the barrier height of palladium-silicide Schottky-diodesSolid-State Electronics, 1971
- Metallurgical properties and electrical characteristics of palladium silicide-silicon contactsSolid-State Electronics, 1971
- Neutron Measurement of Clustering in the Alloy CuNiPhysical Review B, 1968
- Planar millimeter-wave epitaxial silicon Schottky-barrier converter diodesSolid-State Electronics, 1968
- Some Notes on the Palladium-Silicon System.Acta Chemica Scandinavica, 1966
- Amorphous Phase in Palladium—Silicon AlloysJournal of Applied Physics, 1965