Doping dependence of the barrier height of palladium-silicide Schottky-diodes
- 30 November 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (11) , 1087-1092
- https://doi.org/10.1016/0038-1101(71)90019-0
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky BarriersJournal of Applied Physics, 1964
- METALS CONTACTS ON CLEAVED SILICON SURFACESAnnals of the New York Academy of Sciences, 1963