Carrier transport across metal-semiconductor barriers
- 1 June 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (6) , 727-740
- https://doi.org/10.1016/0038-1101(70)90060-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriersSolid-State Electronics, 1969
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORSApplied Physics Letters, 1966
- Quantum-Mechanical Reflection of Electrons at Metal-Semiconductor Barriers: Electron Transport in Semiconductor-Metal-Semiconductor StructuresJournal of Applied Physics, 1966
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Planar Epitaxial Silicon Schottky Barrier DiodesBell System Technical Journal, 1965
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965
- Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky BarriersJournal of Applied Physics, 1964