Growth of single crystal epitaxial silicides on silicon by the use of template layers
- 15 May 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (10) , 888-890
- https://doi.org/10.1063/1.93776
Abstract
A novel crystal growth technique for silicide epitaxy is presented which utilizes thin silicide (2 films can be grown with either type A or type B orientations on Si (111). Continuous single crystal NiSi2 is grown on Si (100) with a flat interface and uniform thickness. Thick CoSi2 can be grown on Si (111) by a similar process using thicker templates.Keywords
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