On the behaviour of buried oxygen implanted layers in highly doped GaAs
- 31 December 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (12) , 1039-1043
- https://doi.org/10.1016/0038-1101(79)90008-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Carrier removal profiles from oxygen implanted GaAsElectronics Letters, 1978
- Growth of GaAs by LPE on Oxygen-Implanted GaAs SubstrateJapanese Journal of Applied Physics, 1977
- Semi-insulating layers of GaAs by oxygen implantationJournal of Applied Physics, 1976
- Optical Properties of n-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence MeasurementsJournal of Applied Physics, 1969
- Diffusion Lengths of Electrons and Holes in GaAsJournal of Applied Physics, 1967
- Measurement of Diffusion Lengths in Direct-Gap Semiconductors by Electron-Beam ExcitationJournal of Applied Physics, 1967