Stoichiometry and atomic defects in rf-sputtered SiO2
- 1 January 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1) , 317-323
- https://doi.org/10.1063/1.325662
Abstract
Electron microprobe and helium ion backscattering are used to measure the stoichiometry of rf‐sputtered SiO2 films at a precision of ?1%. Both oxygen‐excess and oxygen‐deficient films occur. Optical absorption and electron spin resonance characterize atomic defects in the films. The correlation between stoichiometry and atomic defects is poor. The reproducibility of composition and of atomic defects from run to run, when sputtering conditions are held constant, is good.This publication has 20 references indexed in Scilit:
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