Impurity incorporation during rf sputtering of silicon oxide layers
- 16 December 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 14 (2) , 605-611
- https://doi.org/10.1002/pssa.2210140229
Abstract
No abstract availableKeywords
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- Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum FilmsJournal of Applied Physics, 1964