INFLUENCE OF DEPOSITION TEMPERATURE ON PROPERTIES OF HYDROLYTICALLY GROWN ALUMINUM OXIDE FILMS
- 1 April 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (7) , 292-294
- https://doi.org/10.1063/1.1653670
Abstract
Aluminum oxide films deposited onto silicon substrates by hydrolysis of AlCl3 show marked differences in etch rates, electron diffraction patterns, ir absorption spectra, and chlorine contents between films grown below 700°C and above 800°C. Analysis of the composition from the yield of backscattered MeV He ions indicated that both film types were stoichiometric throughout the layer thickness. These analyses indicated that the Cl was incorporated uniformly in the low‐temperature‐deposited films to a level of about 2 at. %.Keywords
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