Analysis of silicon nitride layers deposited from SiH4 and N2 on silicon
- 4 January 1971
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 32 (8) , 1909-1915
- https://doi.org/10.1016/s0022-3697(71)80156-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Analysis of amorphous layers on silicon by backscattering and channeling effect measurementsSurface Science, 1970
- ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTSApplied Physics Letters, 1970
- Some Properties of Silicon Nitride Films Produced by Radio Frequency Glow Discharge Reaction of Silane and NitrogenJapanese Journal of Applied Physics, 1969