Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films

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Abstract
An investigation was made of tantalum films sputtered in argon containing individual small amounts of nitrogen, methane, and oxygen. With argon alone, 1000‐Å bcc tantalum films deposited on glass substrates heated to 400°C had a specific resistivity four times the bulk value, with the increase attributable to a reactive gas residual pressure of 10−6 to 10−5 Torr. The mixed argon‐nitrogen experiments produced initially hcp Ta2N, and at higher pressures an fcc phase attributed to a new TaN structure. With methane only fcc TaC was obtained, while with oxygen an amorphous phase began to grow initially, and at higher pressures was dominant with a structure identical to anodically formed Ta2O5. The nitrides and carbide have specific resistivities from 200–300×10−6 Ω cm, and temperature coefficients between +3×10−4 and −2×10−4 deg−1. With increasing oxygen content, the specific resistivity increases approximately exponentially; the positive temperature coefficient decreases, becomes zero before the precipitation of Ta2O5, and then increases negatively at a rapid rate at the appearance of Ta2O5.

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