States of hydrogen in crystalline semiconductors
- 1 December 1989
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects and Defects in Solids
- Vol. 111-112 (1-2) , 323-344
- https://doi.org/10.1080/10420158908213006
Abstract
The stable configurations of hydrogen in undoped, and in n- and p-semiconductors are reviewed. We compare the experimentally determined configurations with theoretical predictions made by a variety of calculational methods. In undoped Si, as an example, hydrogen appears to occupy a energy occurring at a tetrahedral interstitial (T) site. In B-doped, p-type Si, hydrogen at a near BC site accounts for acceptor passivation. By contrast in n-type Si, hydrogen at the antibonding (AB) position appears to be responsible for donor passivation. The possible configurations in other semiconductors (Ge, GaAs and AlGaAs) are also summarized.Keywords
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